Probability of twin formation on self-catalyzed GaAs nanowires on Si substrate
نویسندگان
چکیده
We attempted to control the incorporation of twin boundaries in self-catalyzed GaAs nanowires (NWs). Self-catalyzed GaAs NWs were grown on a Si substrate under various arsenic pressures using molecular beam epitaxy and the vapor-liquid-solid method. When the arsenic flux is low, wurtzite structures are dominant in the GaAs NWs. On the other hand, zinc blende structures become dominant as the arsenic flux rises. We discussed this phenomenon on the basis of thermodynamics and examined the probability of twin-boundary formation in detail.
منابع مشابه
Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy
In this study, defect-free zinc blende GaAs nanowires on Si (111) by molecular beam epitaxy (MBE) growth are systematically studied through Au-assisted vapor-liquid-solid (VLS) method. The morphology, density, and crystal structure of GaAs nanowires were investigated as a function of substrate temperature, growth time, and As/Ga flux ratio during MBE growth, as well as the thickness, annealing ...
متن کاملObservation of Asymmetric Nanoscale Optical Cavity in GaAs Nanosheets
GaAs nanosheets with no twin defects, stacking faults, or dislocations are excellent candidates for optoelectrical applications. Their outstanding optical behavior and twin free structure make them superior to traditionally studied GaAs nanowires. While many research groups have reported optically resonant cavities (i.e., Fabry−Perot) in 1D nanowires, here, we report an optical cavity resonance...
متن کاملGaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE.
The growth mechanism of GaAs nanowires (NWs) grown on polycrystalline silicon (poly-Si) thin films using selective-area metalorganic vapor-phase epitaxy was investigated. Wire structures were selectively grown in the mask openings on a poly-Si substrate. The appearance ratio of wire structures strongly depended on the growth conditions and deposition temperature of the poly-Si substrate. Evalua...
متن کاملTailoring the diameter and density of self-catalyzed GaAs nanowires on silicon.
Nanowire diameter has a dramatic effect on the absorption cross-section in the optical domain. The maximum absorption is reached for ideal nanowire morphology within a solar cell device. As a consequence, understanding how to tailor the nanowire diameter and density is extremely important for high-efficient nanowire-based solar cells. In this work, we investigate mastering the diameter and dens...
متن کاملPlanar GaAs nanowires on GaAs (100) substrates: self-aligned, nearly twin-defect free, and transfer-printable.
We report the controlled growth of planar GaAs semiconductor nanowires on (100) GaAs substrates using atmospheric pressure metalorganic chemical vapor deposition with Au as catalyst. These nanowires with uniform diameters are self-aligned in <110> direction in the plane of (100). The dependence of planar nanowire morphology and growth rate as a function of growth temperature provides insights i...
متن کامل